FRM430R

FRM430D, FRM430R, FRM430H June 1998 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AA Features 3A, 500V, RDS(on) = 2.50Ω Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 8.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 3E12 Neutrons/cm2 Usable to 3E13 Neutrons/cm2 Gamma Dot Photo Current Neutron Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25MΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied...