Document
FS04...D
SURFACE MOUNT SCR
DPAK (Plastic)
On-State Current 4 Amp
Gate Trigger Current < 200 µA
Off-State Voltage
A
200 V ÷ 600 V
K
A G
These series of S ilicon C ontrolled Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL PARAMETER On-state Current Average On-State Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS 180º Conduction Angle, TC = 115 ºC Half Cycle, Θ=180º, TC = 115 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz t = 10 ms, Half Cycle IGR = 10µA 20 µs max. 20 µs max. 20 ms max. Min. 4 2.5 33 30 4.5 8 1.2 3 0.2 +125 +150 260 Max. Unit A A A A A 2s V A W W ºC ºC ºC
IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld
-40 -40 10s max
SYMBOL
PARAMETER Repetitive Peak Off State Voltage
CONDITIONS RGK = 1 KΩ B 200
VOLTAGE D 400 M 600
Unit V
VDRM VRRM
Jun - 02
FS04...D
SURFACE MOUNT SCR
Electrical Characteristics
SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN MAX VD = VDRM , RGK = 220Ω, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX MAX at IT = 8 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 33Ω, Tj = 25 ºC MAX VD =VDRM, RL = 3.3 KΩ, RGK = 220Ω MIN Tj = 125 ºC MAX IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC MAX VD = 0.67 x VDRM , RGK = 220Ω, MIN Tj = 125 ºC MIN VD = 12 VDC , RL = 33Ω. Tj = 25 ºC 01 1 20 SENSITIVITY 04 15 50 02 200 1 5 1.6 0.8 0.1 5 6 10 10 50 5 10 03 20 200 Unit µA mA µA V V V mA mA V/µs A/µs ºC/W ºC/W
IGT IDRM / IRRM VTM VGT VGD IH IL dv / dt di / dt Rth(j-c) Rth(j-a)
Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC Thermal Resistance Junction-Case for DC Thermal Resistance Junction-Amb (S=0.5 cm2)
3 70
PART NUMBER INFORMATION
F
FAGOR SCR CURRENT
S
04
01
B
D
00
TR
PACKAGING FORMING CASE VOLTAGE
SENSITIVITY
Jun - 02
FS04...D
SURFACE MOUNT SCR
Fig. 1: Maximum average power dissipation versus average on-state current P (W) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 IT(AV)(A)
α = 80 º α 360 º
Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink+contact. P (W) 4.0 3.5
Rth= 37C/W Rth= 15C/W Rth= 5C/W Rth= 10C/W
T case (ºC)
Rth= 0C/W
115
3.0 2.5 2.0 120 1.5 1.0 0.5 0 0 25 50 75 100 125 Tamb (ºC) 125
α=180º
Fig. 3: Average and DC on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) I T(AV) (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 Tamb (ºC)
α = 180 º DC
Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration. K=[Zth(j-c) / Rth(j-c)] 1.0
0.5
0.2
0.1 1E-3 1E-2 1E-1 1E+0
tp (s)
Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration. (recommended pad layout) K=[Zth(j-a) / Rth(j-a)] 1.00
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 2.0 1.8 1.6 1.4 1.2
Igt
Ih (Tj) Ih (Tj = 25 ºC)
0.10
1.0 0.8 0.6 0.4 0.2
Ih
0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
tp (s)
0 -40 -20 0 20 40 60 80 100 120 140
Tj (ºC)
Jun- 02
FS04...D
SURFACE MOUNT SCR
Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 35
Tj initial = 25 ºC F= 50Hz
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp <10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 100
Tj initial = 25 ºC
30 25 20 10 15 10 5 0 1 10 100 1000 Number of cycles 1 1 2 5 10 tp(ms)
I2 t ITSM
Fig. 8: On-state characteristics (maximum values). ITM(A) 50.0
Tj max Vto = 0.85 V Rd =90mΩ
Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). I th(j-a) (ºC/W) 100
80 10.0
Tj=Tj max
60
40 1.0
Tj25 ºC
20
0.1 0 0.5 1 1.5 2 2.5 3 3.5 4
VTM(V)
0
S(cm) 0 2 4 6 8 10 12 14 16 18 20
Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. T(ºC) 250
245ºC 215ºC
200
Epoxy FR4 board
150
100
Metal-backed board
50
0 0 40 80 120 160 200 240 280 320 360
t(s)
Jun - 02
FS04...D
SURFACE MOUNT SCR
PACKAGE MECHANICAL DATA DPAK TO 252-AA
REF.
8º±2º
A ø1x0.15 E L3 8º±2º D H 1.6 L4 8º±2º L e 4.57 Typ. b L2 A1 1.067±0.013 8º±2º 8º±2º D1 c2 E1
A A1 b c c1 c2 D D1 E E1 e H L L1 L2 L3 L4
Min. 2.18 0 0.64 0.46 0.46 5.97 5.21 6.35 5.20 9.40 1.40 2.55 0.46 0.89 0.64
DIMENSIONS Milimeters Nominal 2.3±0.18 0.12.