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FS10ASJ-03 Dataheets PDF



Part Number FS10ASJ-03
Manufacturers Mitsubishi
Logo Mitsubishi
Description Nch POWER MOSFET
Datasheet FS10ASJ-03 DatasheetFS10ASJ-03 Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE FS10ASJ-03 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡4V DRIVE ¡VDSS . 30V ¡rDS (ON) (MAX) . 75mΩ ¡ID .....

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MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE FS10ASJ-03 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡4V DRIVE ¡VDSS ................................................................................. 30V ¡rDS (ON) (MAX) ............................................................. 75mΩ ¡ID ........................................................................................ 10A ¡Integrated Fast Recovery Diode (TYP.) ............ 35ns q MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ± 20 10 40 10 10 40 20 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 30µH MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, V GS = 4V ID = 5A, V GS = 10V ID = 5A, V DS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 58 90 0.29 7.5 360 160 55 11 25 35 23 1.0 — 35 Max. — ±0.1 0.1 2.0 75 150 0.375 — — — — — — — — 1.5 6.25 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, I D = 5A, V GS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case IS = 5A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5 TC = 25°C Single Pulse DC tw = 10ms 100ms 1ms 10ms 32 24 16 8 0 0 50 100 150 200 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 Tc = 25°C Pulse Test VGS = 10V 8V 6V 5V 10 6V Tc = 25°C Pulse Test VGS = 10V 8V 5V 4V DRAIN CURRENT ID (A) 16 4V DRAIN CURRENT ID (A) 8 12 PD = 20W 6 3V 8 3V 4 2.5V 4 2 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 Tc = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 Tc = 25°C Pulse Test VGS = 4V DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.6 80 1.2 ID = 15A 10A 60 10V 0.8 40 0.4 5A 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 Tc = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 TC = 25°C 75°C 125°C VDS = 5V Pulse Test DRAIN CURRENT ID (A) 24 16 8 FORWARD TRANSFER ADMITTANCE yfs (S) 32 0 0 2 4 6 8 10 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2 7 5 3 2 Tch = 25°C f = 1MHZ VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 SWITCHING TIME (ns) td(off) tf tr td(on) CAPACITANCE Ciss, Coss, Crss (pF) 103 Ciss Coss Crss 102 7 5 3 2 Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 Tch = 25°C ID = 10A SOURCE CURRENT IS (A) 8 32 6 VDS = 10V 20V 25V 24 4 16 2 8 TC = 125°C 75°C 25°C 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS .


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