FS10ASJ-2

MITSUBISHI Nch POWER MOSFET FS10ASJ-2 HIGH-SPEED SWITCHING USE FS10ASJ-2 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡4V DRIVE ¡VDSS ............................................................................... 100V ¡rDS (ON) (MAX) ............................................................. 0.19Ω ¡ID ........................................................................................ 10A ¡Integrated Fast Recovery Diode (TYP.) ............ 95ns q MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 100 ± 20 10 40 10 10 40 30 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS10ASJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Ga...