Document
MITSUBISHI Nch POWER MOSFET
FS10UM-14A
HIGH-SPEED SWITCHING USE
FS10UM-14A
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
φ 3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
q w e
wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ................................................................................ 700V ¡rDS (ON) (MAX) ................................................................ 1.3Ω ¡ID ......................................................................................... 10A
TO-220
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 700 ±30 10 30 150 –55 ~ +150 –55 ~ +150 2
Unit V V A A W °C °C g
Feb.1999
Typical value
MITSUBISHI Nch POWER MOSFET
FS10UM-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 700 ±30 — — 2 — — 4.8 — — — — — — — — — Typ. — — — — 3 1.0 5.0 8.0 1380 150 32 25 33 170 55 1.0 — Max. — — ±10 1 4 1.3 6.5 — — — — — — — — 1.5 0.83
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
TC = 25°C Single Pulse DC
160
tw = 10ms 100ms 1ms 10ms 100ms
120
80
40
0
0
50
100
150
200
10–1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10
TC = 25°C Pulse Test VGS = 20V 10V 5V PD = 150W
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V 10V TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
12
5V
6
4.5V
8
PD = 150W
4
4
4V
2
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10UM-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOL.