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FS10UM-14A Dataheets PDF



Part Number FS10UM-14A
Manufacturers Mitsubishi
Logo Mitsubishi
Description Nch POWER MOSFET
Datasheet FS10UM-14A DatasheetFS10UM-14A Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET FS10UM-14A HIGH-SPEED SWITCHING USE FS10UM-14A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS 700V ¡rDS (ON) (MAX) .... 1.3Ω ¡ID .

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MITSUBISHI Nch POWER MOSFET FS10UM-14A HIGH-SPEED SWITCHING USE FS10UM-14A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ................................................................................ 700V ¡rDS (ON) (MAX) ................................................................ 1.3Ω ¡ID ......................................................................................... 10A TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 700 ±30 10 30 150 –55 ~ +150 –55 ~ +150 2 Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS10UM-14A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 700 ±30 — — 2 — — 4.8 — — — — — — — — — Typ. — — — — 3 1.0 5.0 8.0 1380 150 32 25 33 170 55 1.0 — Max. — — ±10 1 4 1.3 6.5 — — — — — — — — 1.5 0.83 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 TC = 25°C Single Pulse DC 160 tw = 10ms 100ms 1ms 10ms 100ms 120 80 40 0 0 50 100 150 200 10–1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 TC = 25°C Pulse Test VGS = 20V 10V 5V PD = 150W CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V 10V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 12 5V 6 4.5V 8 PD = 150W 4 4 4V 2 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10UM-14A HIGH-SPEED SWITCHING USE ON-STATE VOL.


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