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FS1KM-16A Dataheets PDF



Part Number FS1KM-16A
Manufacturers Mitsubishi
Logo Mitsubishi
Description Nch POWER MOSFET
Datasheet FS1KM-16A DatasheetFS1KM-16A Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET FS1KM-16A HIGH-SPEED SWITCHING USE FS1KM-16A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 1 2 3 2.6 ± 0.2 w ¡VDSS 800V ¡rDS (ON) (MAX) .. 12.3Ω ¡ID .....

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MITSUBISHI Nch POWER MOSFET FS1KM-16A HIGH-SPEED SWITCHING USE FS1KM-16A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 1 2 3 2.6 ± 0.2 w ¡VDSS ................................................................................ 800V ¡rDS (ON) (MAX) .............................................................. 12.3Ω ¡ID ............................................................................................ 1A ¡Viso ................................................................................ 2000V q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 800 ±30 1 3 25 –55 ~ +150 –55 ~ +150 2000 2 Unit V V A A W °C °C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FS1KM-16A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 800V, VGS = 0V ID = 1mA, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 800 ±30 — — 2 — — 0.6 — — — — — — — — — Typ. — — — — 3 9.43 4.72 1.0 270 26 4 9 12 35 30 1.0 — Max. — — ±10 1 4 12.3 6.15 — — — — — — — — 1.5 5.0 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 0.5A, VGS = 10V, RGEN = RGS = 50Ω IS = 0.5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 tw = 100ms 40 30 1ms 10ms 100ms TC = 25°C Single Pulse DC 20 10 0 0 50 100 150 200 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 2.0 PD = 25W VGS = 20V 10V TC = 25°C Pulse Test 1.0 TC = 25°C Pulse Test VGS = 20V 10V 5V DRAIN CURRENT ID (A) 1.6 DRAIN CURRENT ID (A) 5V 0.8 1.2 0.


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