Document
MITSUBISHI Nch POWER MOSFET
FS1KM-16A
HIGH-SPEED SWITCHING USE
FS1KM-16A
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
1 2 3
2.6 ± 0.2
w
¡VDSS ................................................................................ 800V ¡rDS (ON) (MAX) .............................................................. 12.3Ω ¡ID ............................................................................................ 1A ¡Viso ................................................................................ 2000V
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 800 ±30 1 3 25 –55 ~ +150 –55 ~ +150 2000 2
Unit V V A A W °C °C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FS1KM-16A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 800V, VGS = 0V ID = 1mA, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 800 ±30 — — 2 — — 0.6 — — — — — — — — — Typ. — — — — 3 9.43 4.72 1.0 270 26 4 9 12 35 30 1.0 — Max. — — ±10 1 4 12.3 6.15 — — — — — — — — 1.5 5.0
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 0.5A, VGS = 10V, RGEN = RGS = 50Ω IS = 0.5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2
tw = 100ms
40
30
1ms 10ms 100ms TC = 25°C Single Pulse DC
20
10
0
0
50
100
150
200
3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 2.0
PD = 25W VGS = 20V 10V TC = 25°C Pulse Test
1.0
TC = 25°C Pulse Test
VGS = 20V 10V 5V
DRAIN CURRENT ID (A)
1.6
DRAIN CURRENT ID (A)
5V
0.8
1.2
0.