FS1UM-18A

MITSUBISHI Nch POWER MOSFET FS1UM-18A HIGH-SPEED SWITCHING USE FS1UM-18A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ................................................................................ 900V ¡rDS (ON) (MAX) .............................................................. 15.0Ω ¡ID ............................................................................................ 1A TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 900 ±30 1 3 65 –55 ~ +150 –55 ~ +150 2 Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS1UM-18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 900V, VGS = 0V ID = 1mA, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 900 ±3...