HYB5116165BJ-70

1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns Single + 5 V (± 10 %) supply Low power dissipation max. 1100 active mW ( HYB5118165BSJ-50) max. 990 active mW ( HYB5118165BSJ-60) max. 880 active mW ( HYB5118165BSJ-70) max. 550 active mW ( HYB5116165BSJ-50) max. 495 active mW ( HYB5116165BSJ-60) max. 440 active mW ( HYB5116165BSJ-70) 11 mW standby (TTL) 5.5. mW standby (MOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and Self Refresh Hyper page mode (EDO) capability All inputs, outputs and clocks fully TTL-compatible 1024 refresh cycles / 16 ms for HYB5118165BSJ (1k-Refresh) 4096 refresh cycles / 64 ms for HYB5116165BSJ (4k-Refresh) Plastic Package: P-SOJ-42-1 400 mil Semiconductor Group 1 1.96 HYB 5116(8)165BSJ-50/-60/-70 1M x 16-EDO DRAM The HYB 5116(8)165BSJ is a 16 MBit dynamic RAM organized as 1 048 576 words by 16-bits. The HYB 5116(8)165BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wid...