HYB5118160BSJ-70

1M x 16-Bit Dynamic RAM (1k-Refresh) HYB5118160BSJ-50/-60/-70 Advanced Information 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns Single + 5 V (± 10 %) supply Low power dissipation max. 1100 active mW (-50 version) max. 990 active mW (-60 version) max. 880 active mW (-70 version) 11 mW standby (TTL) 5.5. mW standby (MOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh Fast page mode capability 2 CAS / 1 WE All inputs, outputs and clocks fully TTL-compatible 1024 refresh cycles / 16 ms Plastic Package: P-SOJ-42-1 400 mil Semiconductor Group 1 1.96 HYB 5118160BSJ-50/-60/-70 1M x 16-DRAM The HYB 5118160BSJ is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 5118160BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5118160BSJ to be packaged in a standard SOJ 42 400 mil plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion...