HYE25L256160AC

Data Sheet, V1.1, April 2003 HYE25L256160AC 256-Mbit Mobile-RAM Extended Temperature Range Memory Products N e v e r s t o p t h i n k i n g . HYE25L256160AC Revision History: Previous Version: Page all Page 13f Page 15 Page 18 Page 19 Page 20 Page 20 Page 20ff Page 22 Page 23f 2003-04-16 2001-11-23 V1.1 V1.0 Subjects (major changes since last version) applied new data sheet template Din-A4 Temperature Compensated Self Refresh with On-Chip Temperature Sensor Table Operation Definition extended by two rows “Clock Suspend Entry” and “Clock Suspend Exit”; Note 5 extended by “When this command is asserted during a burst cycle the device …” “Self Refresh” description improved “Simplified State Diagram” added relaxed Absolute Maximum Ratings (+0.5/–1.0 V instead of ±0.3 V relative to VDD/VSS) Note 4: relaxed over-/underswing delta to 2.0 V deleted VDD and VDDQ range above tables and partly replaced by note “(Recommended Operating Conditions unless otherwise noted)“ PC133 replaced by –7.5 table operating currents updated, symbols changed from ICC to IDD, value type “max.” added, IDD6 named “self refresh current”, IDD1 description (“Single bank access cycles”) updated tCK defined by Note 3 or set to infinity; Note 4: “assumed” replaced by “used” revised timing diagram SPT03919-4 TFBGA package outline moved to end , added “tolerance ±0.1mm for length and width” Page 41 Page 54 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or m...