HYM321005GS-50

1M × 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version) HYM 321005S/GS-50/-60 Advanced Information SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode- EDO capability with 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max 2200 mW active (-50 version) max. 1980 mW active (-60 version) CMOS – 11 mW standby TTL – 22 mW standby CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh 2 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 72 pin Single in-Line Memory Module Utilizes two 1M × 16 -DRAMs in SOJ-42 packages 1024 refresh cycles / 16 ms Optimized for use in byte-write non-parity applications Tin-Lead contact pad HYM 321005S Gold-Lead contact pad HYM 321005GS single sided module with 20.32 mm (800 mil) height Semiconductor Group 1 9.96 HYM 321005S/GS-50/-60 1M × 32-Bit EDO-Module The HYM 321005S/GS-50/-60 is a 4 MByte EDO- DRAM module organized as 1 048 576 words by 32-bit in a 72-pin single-in-line package comprising two HYB 5118165BSJ 1M × 16 EDO-DRAMs in 400 mil wide SOJ-packages mounted together with two 0.2 µF ceramic decoupling capacitors on a PC board. Each HYB 5118165BSJ is described in the data sheet and is fully electrically tested...