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HYM322005GS-60 Dataheets PDF



Part Number HYM322005GS-60
Manufacturers Siemens
Logo Siemens
Description 2M x 32-Bit Dynamic RAM Module
Datasheet HYM322005GS-60 DatasheetHYM322005GS-60 Datasheet (PDF)

2M × 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version) HYM 322005S/GS-50/-60 • SIMM modules with 2 097 152 words by 32-bit organization for PC main memory application Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode - EDO capability with 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 2200 mW active (-50 version) max. 1980 m.

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2M × 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version) HYM 322005S/GS-50/-60 • SIMM modules with 2 097 152 words by 32-bit organization for PC main memory application Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode - EDO capability with 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 2200 mW active (-50 version) max. 1980 mW active (-60 version) CMOS – 22 mW standby TTL – 44 mW standby CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh 4 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 72 pin Single in-Line Memory Module Utilizes four 1M × 16 -DRAMs in SOJ-42 packages 1024 refresh cycles / 16 ms Optimized for use in byte-write non-parity applications Tin-Lead contact pad HYM 322005S Gold-Lead contact pad HYM 322005GS single sided module with 20.32 mm (800 mil) height • • • • • • • • • • • • • • Semiconductor Group 1 9.96 HYM 322005S/GS-50/-60 2M × 32-Bit EDO-Module The HYM 322005S/GS-50/-60 is a 8 MByte EDO - DRAM module organized as 2 097 152 words by 32-bit in a 72-pin single-in-line package comprising four HYB 5118160BSJ 1M × 16 EDO - DRAMs in 400 mil wide SOJ-packages mounted together with four 0.2 µF ceramic decoupling capacitors on a PC board. Each HYB 5118165BSJ is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use presence detect pins. The common I/O feature on the HYM 322005S/GS-50/-60 dictates the use of early write cycles. Ordering Information Type HYM 322005S-50 HYM 322005S-60 HYM 322005GS-50 HYM 322005GS-60 Ordering Code Q67100-Q2066 Q67100-Q2067 Q67100-Q2068 Q67100-Q2069 Package L-SIM-72-10 L-SIM-72-10 L-SIM-72-10 L-SIM-72-10 Descriptions EDO - DRAM module (access time 50 ns) EDO - DRAM module (access time 60 ns) EDO - DRAM module (access time 50 ns) EDO - DRAM module (access time 60 ns) Semiconductor Group 2 HYM 322005S/GS-50/-60 2M × 32-Bit EDO-Module Pin Names VSS DQ16 DQ17 DQ18 DQ19 N.C. A1 A3 A5 N.C. DQ20 DQ21 DQ22 DQ23 N.C. A8 RAS3 N.C. 1 DQ0 2 3 DQ1 4 5 DQ2 6 7 DQ3 8 9 VCC 10 11 A0 12 13 A2 14 15 A4 16 17 A6 18 19 DQ4 20 21 DQ5 22 23 DQ6 24 25 DQ7 26 27 A7 28 29 VCC 30 31 A9 32 33 RAS2 34 35 N.C. 36 A0-A9 DQ0-DQ31 CAS0 - CAS3 RAS0 - RAS3 WE Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power (+ 5 V) Ground Presence Detect Pin No Connection VCC VSS PD N.C. N.C. VSS CAS2 CAS1 RAS1 WE DQ8 DQ9 DQ10 DQ11 DQ12 VCC DQ13 DQ14 DQ15 PD0 PD2 N.C. 37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 67 69 71 N.C. 38 CAS0 40 CAS3 42 RAS0 44 N.C. 46 N.C. 48 DQ24 50 DQ25 52 DQ26 54 DQ27 56 DQ28 58 DQ29 60 DQ30 62 DQ31 64 N.C. 66 PD1 68 PD3 70 VSS 72 Presence Detect Pins -50 PD0 PD1 PD2 PD3 N.C. N.C. -60 N.C. N.C N.C. N.C. VSS VSS Pin Configuration Semiconductor Group 3 HYM 322005S/GS-50/-60 2M × 32-Bit EDO-Module RAS0 CAS0 CAS1 RAS1 UCAS LCAS RAS DQ0-DQ7 DQ8-DQ15 I/O1-I/O8 UCAS LCAS RAS I/O1-I/O8 I/O9-I/O16 OE I/O9-I/O16 OE D1 D3 RAS2 CAS2 CAS3 RAS3 UCAS LCAS RAS DQ16-DQ23 DQ24-DQ31 I/O1-I/O8 UCAS LCAS RAS I/O1-I/O8 I/O9-I/O16 OE I/O9-I/O16 OE D2 D4 A0 - A9 WE VCC VSS C1 -C4 D1 - D4 D1 - D4 Block Diagram Semiconductor Group 4 HYM 322005S/GS-50/-60 2M × 32-Bit EDO-Module Absolute Maximum Ratings Operating temperature range ......................................................................................... 0 to + 70 °C Storage temperature range...................................................................................... – 55 to + 125 °C Input/output voltage ........................................................................................................ – 1 to + 7 V Power supply voltage...................................................................................................... – 1 to + 7 V Power dissipation................................................................................................................... 2.52 W Data out current (short circuit) ................................................................................................ 50 mA Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %; tT = 2 ns Parameter Input high voltage Input low voltage Output high voltage ( IOUT = – 5 mA) Output low voltage ( IOUT = 4.2 mA) Input leakage current (0 V ≤ VIH ≤ Vcc + 0.3V, all other pins = 0 V) Output leakage current (DO is disabled, 0 V ≤ VOUT ≤ Vcc + 0.3V) Average VCC supply current: -50 ns version -60 ns versio.


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