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HYM322035S Dataheets PDF



Part Number HYM322035S
Manufacturers Siemens
Logo Siemens
Description 2M x 32-Bit Dynamic RAM Module
Datasheet HYM322035S DatasheetHYM322035S Datasheet (PDF)

2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information • • • 2 097 152 words by 32-bit organization 1 memory bank Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) 70 ns access time 124 ns cycle time (-70 version) Hyper page mode - EDO capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 26.

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2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information • • • 2 097 152 words by 32-bit organization 1 memory bank Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) 70 ns access time 124 ns cycle time (-70 version) Hyper page mode - EDO capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 2640 mW active (-50 version) max. 2420 mW active (-60 version) max. 2200 mW active (-70 version) CMOS – 22 mW standby TTL –44 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 4 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-9 ) with 20.32 mm (800 mil) height Utilizes four 2M × 8 -DRAMs in 400 mil SOJ packages 2048 refresh cycles / 32 ms with 11/10 addressing Optimized for use in byte-write non-parity applications Tin-Lead contact pads (S-version) Gold contact pads (GS - version) • • • • • • • • • • • • Semiconductor Group Semicunductor 1 2.96 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module The HYM 322035S/GS-50/-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32-bit in a 72-pin single-in-line package comprising four HYB 5117805BSJ 2M × 8 EDO-DRAMs in 400 mil wide SOJ-packages mounted together with four 0.2 µF ceramic decoupling capacitors on a PC board. Each HYB 5117805BSJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 322035S/GS-60/-70 dictates the use of early write cycles. Ordering Information Type HYM 322035S-50 HYM 322035S-60 HYM 322035S-70 HYM 322035GS-50 HYM 322035GS-60 HYM 322035GS-70 Ordering Code Package L-SIM-72-9 L-SIM-72-9 L-SIM-72-9 L-SIM-72-9 L-SIM-72-9 L-SIM-72-9 Description EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 70 ns) EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 70 ns) Semiconductor Group 2 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module Pin Configuration Pin Names VSS DQ16 DQ17 DQ18 DQ19 N.C. A1 A3 A5 A10 DQ20 DQ21 DQ22 DQ23 N.C. A8 N.C. N.C. N.C. VSS CAS2 CAS1 N.C. WE DQ8 DQ9 DQ10 DQ11 DQ12 VCC DQ13 DQ14 DQ15 PD0 PD2 N.C. 1 DQ0 2 3 DQ1 4 5 DQ2 6 7 DQ3 8 9 VCC 10 11 A0 12 13 A2 14 15 A4 16 17 A6 18 19 DQ4 20 21 DQ5 22 23 DQ6 24 25 DQ7 26 27 A7 28 29 VCC 30 31 A9 32 33 RAS2 34 35 N.C. 36 37 N.C. 38 39 CAS0 40 41 CAS3 42 43 RAS0 44 45 N.C. 46 47 N.C. 48 49 DQ24 50 51 DQ25 52 53 DQ26 54 55 DQ27 56 57 DQ28 58 59 DQ29 60 61 DQ30 62 63 DQ31 64 65 N.C. 66 67 PD1 68 69 PD3 70 71 VSS 72 A0R-A10R A0C-A9C DQ0-DQ31 CAS0 - CAS3 RAS0, RAS2 WE Row Address Inputs Column Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power (+ 5 V) Ground Presence Detect Pin No Connection VCC VSS PD N.C. Presence Detect Pins -50 PD0 PD1 PD2 PD3 N.C. N.C. -60 N.C. N.C. N.C. N.C. -70 N.C. N.C. VSS VSS VSS N.C. Semiconductor Group 3 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module RAS0 CAS0 CAS DQ0-DQ7 I/O1-I/O8 OE D1 RAS CAS1 CAS DQ8-DQ15 I/O1-I/O8 OE D2 RAS RAS2 CAS2 CAS DQ16-DQ23 I/O1-I/O8 OE D3 RAS CAS3 CAS DQ24-DQ31 I/O1-I/O8 OE D4 RAS A0R - A10R, A0C - A9C WE VCC C1 - C 4 VSS D1 - D4 D1 - D4 Block Diagram Semiconductor Group 4 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module Absolute Maximum Ratings Operation temperature range ......................................................................................... 0 to + 70 °C Storage temperature range......................................................................................... – 55 to 125 °C Input/output voltage ............................................................................–0.5V to min (Vcc+0.5, 7.0) V Power supply voltage...................................................................................................... – 1 to + 7 V Power dissipation..................................................................................................................... 4.2 W Data out current (short circuit) ................................................................................................ 50 mA Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics TA = 0 to 70 °C, VCC = 5 V ± 10 % Parameter Symbol Limit Values min. Input high voltage Input low voltage Output high voltage (IOUT = – 5 mA) Output low voltage (IOUT = 4.2 mA) Input leakage current (0 V < VIN < 6.5 V.


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