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HYM361120S-70 Dataheets PDF



Part Number HYM361120S-70
Manufacturers Siemens
Logo Siemens
Description 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
Datasheet HYM361120S-70 DatasheetHYM361120S-70 Datasheet (PDF)

1M × 36-Bit Dynamic RAM Module (2M × 18-Bit Dynamic RAM Module) HYM 361120/40S/GS-60/-70 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 6820 mW active (-60 version) .

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1M × 36-Bit Dynamic RAM Module (2M × 18-Bit Dynamic RAM Module) HYM 361120/40S/GS-60/-70 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 6820 mW active (-60 version) max. 6160 mW active (-70 version) CMOS – 66 mW standby TTL – 132 mW standby CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh • 12 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 72 pin Single in-Line Memory Module Utilizes four 1M × 1-DRAMs and eight 1M × 4-DRAMs in 300 mil SOJ packages 1024 refresh cycles/16 ms Tin-Lead contact pads (S - version) Gold contact pads (GS - version) HYM 321140S: single sided module with 31.75 mm (1250 mil) height HYM 321120S: double sided module with 25.40 mm (1000 mil) height • • • • • • • • • • • • • Ordering Information Type HYM 361140S-60 HYM 361140S-70 HYM 361120S-60 HYM 361120S-70 HYM 361140GS-60 HYM 361140GS-70 HYM 361120GS-60 HYM 361120GS-70 Ordering Code Q67100-Q959 Q67100-Q958 Q67100-Q942 Q67100-Q741 Q67100-Q1019 Q67100-Q651 Q67100-Q961 Q67100-Q960 Package L-SIM-72-8 L-SIM-72-8 L-SIM-72-3 L-SIM-72-3 L-SIM-72-8 L-SIM-72-8 L-SIM-72-3 L-SIM-72-3 Descriptions DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns) Semiconductor Group 591 06.94 HYM 361120/40S/GS-60/-70 1M × 36-Bit The HYM 361120/40S/GS-60/-70 is a 4 MByte DRAM module organized as 1 048 576 words by 36-bit in a 72-pin single-in-line package comprising four HYB 511000BJ 1M × 1 DRAMs and eight HYB 514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with twelve 0.2 µF ceramic decoupling capacitors on a PC board. The HYM 361120/40S/GS-60/-70 can also be used as a 2 097 152 words by 18-bits dynamic RAM module by means of connecting DQ0 and DQ18, DQ1 and DQ19, DQ2 and DQ20, …, DQ17 and DQ35, respectively. Each HYB 511000BJ and HYB 514400BJ is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 361120/40S/GS-60/-70 dictates the use of early write cycles. Pin Definitions and Functions Pin No. A0-A9 DQ0-DQ35 CAS0 - CAS3 RAS0, RAS2 WE Function Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power (+ 5 V) Ground Presence Detect Pin No Connection VCC VSS PD N.C. Presence Detect Pins -60 PD0 PD1 PD2 PD3 -70 VSS VSS N.C. N.C. VSS VSS VSS N.C. Semiconductor Group 592 HYM 361120/40S/GS-60/-70 1M × 36-Bit Pin Configuration (top view) Semiconductor Group 593 HYM 361120/40S/GS-60/-70 1M × 36-Bit Block Diagram Semiconductor Group 594 HYM 361120/40S/GS-60/-70 1M × 36-Bit Absolute Maximum Ratings Operating temperature range ......................................................................................... 0 to + 70 ˚C Storage temperature range...................................................................................... – 55 to + 125 ˚C Soldering temperature ............................................................................................................ 260 ˚C Soldering time ............................................................................................................................. 10 s Input/output voltage ........................................................................................................ – 1 to + 7 V Power supply voltage...................................................................................................... – 1 to + 7 V Power dissipation................................................................................................................... 8.68 W Data out current (short circuit) ................................................................................................ 50 mA Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics 1) TA = 0 to 70 ˚C; VCC = 5 V ± 10 % Parameter Input high voltage Input low voltage Output high voltage (IOUT = – 5 mA) Output low voltage (IOUT = 4.2 mA) Input leakage current (0 V < VIN < 6.5 V, all other pins = 0 V) Output leakage current (DO is disabled, 0 V < VOUT < 5.5 V) Average VCC supply current: -60 version -70 vers.


HYM361120S-60 HYM361120S-70 HYM361140GS-60


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