HYM364035GS-60

4M × 36-Bit EDO-DRAM Module HYM 364035S/GS-60 Advanced Information 4 194 304 words by 36-Bit organization Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time Hyper page mode (EDO) capability 25 ns cycle time Single + 5 V (± 10 %) supply Low power dissipation max. 7260 mW active CMOS – 66 mW standby TTL – 132 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 12 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72) with 22.9 mm (900 mil) height Utilizes 12 4M x 3 DRAM’s in 300 mil SOJ packages 2048 refresh cycles / 32 ms Optimized for use in byte-write parity applications Tin-Lead contact pads (HYM 364035S-60) Gold contact pads (HYM 364035GS-60) Semiconductor Group 1 4.96 HYM 364035S/GS-60 4M × 36-Bit EDO-Module The HYM 364035S/GS-60 is a 16 MByte EDO-DRAM module organized as 4 194 304 words by 36Bit in a 72-pin single-in-line package comprising twelve HYB 5117305BJ 4M × 3 DRAMs in 300 mil wide SOJ-packages mounted together with twelve 0.2 µF ceramic decoupling capacitors on a PC board. The HYB 5117305BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence dete...