HYM721010GS-60

1M × 72-Bit Dynamic RAM Module (ECC - Module) HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information 1 048 576 words by 72-bit ECC - mode organization Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 10890 mW active (-60 version) max. 9900 mW active (-70 version) CMOS – 451 mW standby TTL – 550 mW standby CAS-before-RAS refresh, RAS-only-refresh 18 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs excepts RAS and DQ 168 pin, dual read-out, Single in-Line Memory Module Utilizes eighteen 1M × 4 -DRAMs in TSOPII-packages and four BiCMOS 8-bit buffers/line drivers 74ABT244 Two versions: HYM 721000GS with TSOPII-components (4.06 mm module thickness) HYM 721010GS with SOJ-components (8.89 mm module thickness) 1024 refresh cycles / 16 ms Gold contact pad double sided module with 25.35 mm (1000 mil) height Semiconductor Group 1 12.95 HYM721000/10GS-60/-70 1M x 72 ECC- Module The HYM 721000GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 514400BT 1M × 4 DRAMs in 300 mil wide TSOPII - packages mounte...