HYM72V1600GS-60

16M × 72-Bit Dynamic RAM Module (ECC - Module ) HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information 16 777 216 words by 72-bit ECC - mode organization Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3V (± 0.3V) supply Low power dissipation max. 6480 mW active (-50 version) max. 5832 mW active (-60 version) CMOS – 108 mW standby LVTTL – 180 mW standby CAS-before-RAS refresh, RAS-only-refresh 18 decoupling capacitors mounted on substrate All inputs, outputs and clock fully LVTTL & LVCMOS compatible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs excepts RAS and DQ 168 pin, dual read-out, Single in-Line Memory Module Utilizes eighteen 16M × 4 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A Two versions : HYM 72V1600GS with TSOPII-components (4 mm thickness) HYM 72V1610GS with SOJ-components (9 mm thickness) 8192 refresh cycles / 128 ms with 13 / 11 addressing Gold contact pad double sided module with 38.1 mm (1500 mil) height Semiconductor Group 1 11.95 16M × 72-Bit Dynamic RAM Module (ECC - Module ) HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information 16 777 216 words by 72-bit ECC - mode organization Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access ti...