HYM72V4000GS-50

4M × 72-Bit Dynamic RAM Module (ECC - Module ) HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 168 pin 4 194 304 words by 72-bit ECC - mode organization for PC main memory applications Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3V ( ± 0.3V) supply Low power dissipation max. 6480 mW active (-50 version) max. 5832 mW active (-60 version) CMOS – 108 mW standby LVTTL – 180 mW standby CAS-before-RAS refresh, RAS-only-refresh Decoupling capacitors mounted on substrate All inputs, outputs and clock fully LVTTL & LVCMOS compatible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs excepts RAS and DQ 168 pin, dual read-out, Single in-Line Memory Module Utilizes eighteen 4M × 4 -DRAMs and four BiCMOS 8-bit buffers/line drivers LV244A Two versions : HYM 72V4000GS with TSOPII-components (4 mm thickness) HYM 72V4010GS with SOJ-components (9 mm thickness) 4096 refresh cycles / 64 ms with 12 / 10 addressing Gold contact pad Double sided module with 25.35 mm (1000 mil) height Semiconductor Group 1 11.95 HYM72V4000/10GS-50/-60 4M x 72-ECC Module The HYM 72V4000/10GS-50/-60 is a 32 MByte DRAM module organized as 4 194 430 words by 72bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3116400BT/BJ 4M × 4 DRAMs in 300 mil wid...