3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module
3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules
HYS64V4120GU-...
Description
3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules
HYS64V4120GU-10 HYS72V4120GU-10
168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications Fully PC66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance:
-10 fCK tAC Max. Clock frequency Max. access time from clock 66 MHz @ CL=2 100 MHz @ CL=3 9 ns @ CL=2 8 ns @ CL=3
Single +3.3V(± 0.3V ) power supply Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh Decoupling capacitors mounted on substrate All inputs, outputs are LVTTL compatible Serial Presence Detect with E 2PROM Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages 4096 refresh cycles every 64 ms Gold contact pad Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU
Semiconductor Group
1
2.98
HYS64(72)V4120GU-10 4M x 64/72 SDRAM-Module
The HYS64(72)V4120GU-10 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use 16 2M x 8 SDRAMs for the 4M x 64 organisation and additional two SDRAMs for the 4M x 72 organisation. Decoupling capacitors are mounted on the PC bo...
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