3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module
3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168 pin unbuffered DIMM Modules
HYS ...
Description
3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168 pin unbuffered DIMM Modules
HYS 64/72V8200GU HYS 64/72V16220GU
168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 8M × 64, 8M × 72 and 2 bank 16M × 64, 16M × 72 organization Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification SDRAM Performance -8 -8B 100 6 -10 66 8 Units MHz ns
fCK tAC
Clock frequency (max.) Clock access time
100 6
Programmed Latencies Product Speed -8 -8B -10 PC100 PC100 PC66 CL 2 3 2
tRCD
2 2 2
tRP
2 3 2
Single + 3.3 V (± 0.3 V ) power supply Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh Decoupling capacitors mounted on substrate All inputs, outputs are LVTTL compatible Serial Presence Detect with E2PROM Utilizes 8M × 8 SDRAMs in TSOPII-54 packages 4096 refresh cycles every 64 ms 133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads
Semiconductor Group
1
1998-08-01
HYS 64(72)V8200/16220GU-8/-10 SDRAM Modules
The HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 bank and 16M × 64 and 16M × 72 in two banks high speed memory arrays designed with 64M Synchronous DRAMs (S...
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