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HYS72V4220GU-10 Dataheets PDF



Part Number HYS72V4220GU-10
Manufacturers Siemens
Logo Siemens
Description 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
Datasheet HYS72V4220GU-10 DatasheetHYS72V4220GU-10 Datasheet (PDF)

3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’ s Rev. 1.0 module speci.

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3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’ s Rev. 1.0 module specification SDRAM Performance: -8 fCK tAC Clock frequency (max.) Clock access time 100 6 -8-3 100 6 -10 66 8 Units MHz ns • • • • • • Programmed Latencies : Product Speed -8 -8-3 -10 PC100 PC100 PC66 CL 2 3 2 tRCD 2 2 2 tRP 2 3 2 • • Single +3.3V(± 0.3V ) power supply Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh Decoupling capacitors mounted on substrate All inputs, outputs are LVTTL compatible Serial Presence Detect with E 2PROM Utilizes 2M x 8 SDRAMs in TSOPII-44 packages 4096 refresh cycles every 64 ms 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads • • • • • • • Semiconductor Group 1 6.98 HYS64(72)V2200/4220GU-8/-10 SDRAM-Modules The HYS64(72)2200 and HYS64(72)4220 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 2M x 64, 2M x 72 in 1 bank and 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 speed sort 2M x 8 SDRAM devices in TSOP44 packages to meet the PC100 requirement. Modules which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’ s PC SDRAM Rev.1.0 module specification. The DIMMs have a serial presence detect, implemented with a serial E 2PROM using the two pin I2C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user. All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long footprint, with 1,25“( 31,75 mm) height Ordering Information Type HYS 64V2200GU-8 HYS 72V2200GU-8 HYS 64V4220GU-8 HYS 72V4220GU-8 HYS 64V2200GU-8-3 HYS 72V2200GU-8-3 HYS 64V4220GU-8-3 HYS 72V4220GU-8-3 HYS 64V2200GU-10 HYS 72V2200GU-10 HYS 64V4220GU-10 HYS 72V4220GU-10 Ordering Code PC100-222-620 PC100-222-620 PC100-222-620 PC100-222-620 PC100-323-620 PC100-323-620 PC100-323-620 PC100-323-620 PC66-222-920 PC66-222-920 PC66-222-920 PC66-222-920 Package Descriptions Module Height 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ L-DIM-168-29 100 Mhz 2M x 64 1 bank SDRAM module L-DIM-168-29 100 MHz 2M x 72 1 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 64 2 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 72 2 bank SDRAM module L-DIM-168-29 100 Mhz 2M x 64 1 bank SDRAM module L-DIM-168-29 100 MHz 2M x 72 1 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 64 2 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 72 2 bank SDRAM module L-DIM-168-29 66 Mhz 2M x 64 1 bank SDRAM module L-DIM-168-29 66 MHz 2M x 72 1 bank SDRAM module L-DIM-168-29 66 Mhz 4M x 64 2 bank SDRAM module L-DIM-168-29 66 Mhz 4M x 72 2 bank SDRAM module Pin Names Address Inputs Bank Address Data Input/Output Check Bits (x72 organisation only) RAS Row Address Strobe CAS Column Address Strobe Read / Write Input WE CKE0, CKE1 Clock Enable A0-A10 BA DQ0 - DQ63 CB0-CB7 CLK0 - CLK3 DQMB0 - DQMB7 CS0 - CS3 Vcc Vss SCL SDA N.C. Clock Input Data Mask Chip Select Power (+3.3 Volt) Ground Clock for Presence Detect Serial Data Out for Presence Detect No Connection Address Format: 2M x 64 2M x 72 4M x 64 4M x 72 Part Number HYS 64V2200GU HYS 72V2200GU HYS 64V4220GU HYS 72V4220GU Rows 11 11 11 11 Columns 9 9 9 9 Banks 1 1 1 1 Refresh 4k 4k 4k 4k Period 64 ms 64 ms 64 ms 64 ms Interval 15,6 µs 15,6 µs 15,6 µs 15,6 µs Semiconductor Group 2 HYS64(72)V2200/4220GU-8/-10 SDRAM-Modules Pin Configuration PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Symbol VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 NC (CB0) NC (CB1) VSS NC NC VCC WE DQMB0 DQMB1 CS0 DU VSS A0 A2 A4 A6 A8 A10 NC VCC VCC CLK0 PIN # 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Symbol VSS DU CS2 DQMB2 DQMB3 DU VCC NC NC NC (CB2) NC (CB3) VSS DQ16 DQ17 DQ18 DQ19 VCC DQ20 NC DU CKE1 VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VCC DQ28 DQ29 DQ30 DQ31 VSS CLK2 NC WP SDA SCL VCC PIN # 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 Symbol VSS DQ32 DQ33 DQ34 DQ35 VCC DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VCC DQ46 DQ47 NC (CB4) NC (CB5) VSS NC NC VCC CAS DQMB4 DQ.


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