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HYS72V64220GU

Infineon

3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules

HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules • 168-pin...


Infineon

HYS72V64220GU

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Description
HYS 64/72V64220GU SDRAM-Modules 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 168-pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications using 256Mbit technology. PC100-222, PC133-333 & PC133-222 versions Two bank 64M × 64 and 64M × 72 organization Optimized for byte-write non-parity and ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Programmed Latencies: Product Speed -7 -7.5 -8 PC133 PC133 PC100 CL 2 3 2 tRCD tRP Single + 3.3 V (± 0.3 V) power supply Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh Decoupling capacitors mounted on substrate All inputs and outputs are LVTTL compatible Serial Presence Detect with E2PROM Uses Infineon 256 Mbit SDRAM components in 32M × 8 organization and TSOPII-54 packages Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification Gold contact pad, card size: 133.35 mm × 31.75 mm × 4.00 mm (JEDEC MO-161-BA) 2 3 2 2 3 2 SDRAM Performance: -7 PC133 fCK tAC -7.5 PC133 133 5.4 -8 PC100 100 6 Unit MHz ns Clock Frequency (max.) Clock Access time 133 5.4 Description The HYS 64V64220GU and HYS 72V64220GU are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organized as 64M × 64 and 64M × 72 in two banks high speed memory arrays designed with 256M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use “-7”...




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