HZM27WA

HZM27WA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-352A(Z) Rev 1 Feb. 1999 Features HZM27WA has two devices, and can absorb external + and -surge. MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM27WA Laser Mark 27A Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HZM27WA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Two device total, See Fig.2. Electrical Characteristics (Ta = 25°C) *1 Item Zener voltage Reverse current Capacitance *2 Symbol VZ IR C rd  Min    30 Typ  (27)   Max Unit µA pF Ω kV Test Condition I Z = 2 mA, 40ms pulse VR = 21V VR = 0V, f = 1 MHz I Z = 2 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse 25.10  28.90 V 2  70  Dynamic resistance ESD-Capability *3 Notes 1. Per one device. 2. Reference only. 3. Failure criterion ; IRÅÑ2 µA at VR = 21V. 2 HZM27WA Main Characteristic 10 250 1.0mm 8 (mA) Power Dissipation Pd (mW) 200 Cu Foil Zener Current Iz 6 150 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 4 100 2 50 0 0 5 10 15 20 25 30 35 40 0 0 50 100 150 200 Zener Voltage Vz (V) Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Fig.1 Zener current Vs. Zener voltage 10 Nonrepetitive Surge Reverses Pow...