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HZM4.3FA Dataheets PDF



Part Number HZM4.3FA
Manufacturers Hitachi
Logo Hitachi
Description Silicon Epitaxial Planar Zener Diode for Surge Absorb
Datasheet HZM4.3FA DatasheetHZM4.3FA Datasheet (PDF)

HZM4.3FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-468(Z) Rev 0 Features • HZM4.3FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM4.3FA Laser Mark 43A Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM4.3FA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature St.

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HZM4.3FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-468(Z) Rev 0 Features • HZM4.3FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM4.3FA Laser Mark 43A Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM4.3FA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd Tj Tstg *1 Value 200 150 –55 to +150 Unit mW °C °C 1. Four device total, With P.C board. Electrical Characteristics (Ta = 25°C) *2 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *1 Symbol VZ IR C rd — Min 4.01 — — — 30 Typ — — — — — Max 4.48 10 150 130 — Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 1V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes: 1. Failure criterion ; IR ≥ 10 µA at VR = 1V. 2. Per one device. 2 HZM4.3FA Main Characteristic 10 1.0 (A) Iz Zener Current 10 -1 10 -2 10 10 -3 -4 10 10 -5 -6 -7 10 0 1 2 3 4 5 6 7 8 Zener Voltage Vz (V) Fig.1 Zener current Vs. Zener voltage 250 1.0mm 200 Power Dissipation Pd (mW) Cu Foil 150 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 100 50 0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature 0.6mm 3 HZM4.3FA Main Characteristic Nonrepetitive Surge Reverses Power PRSM (W) 10 4 PRSM t 10 3 Ta = 25°C nonrepetitive 10 2 10 1.0 10 -5 10 -4 10 Time t -3 10 (s) -2 10 -1 1.0 Fig.3 Surge Reverse Power Ratings 10 Transient Thermal Impedance Z th (°C/W) 4 10 3 10 2 0.4 20hx15wx0.8t 1.0 1.0 1.5 1.75 unit: mm 3.0 2.7 10 2.4 10 -2 10 -1 1.0 Time t (s) 10 10 2 10 3 Fig.4 Transient Thermal Impedance 4 HZM4.3FA Package Dimensions Unit : mm (0.95) (0.95) (0.6) 0.4±0.1 1 2 0.4±0.1 Laser Mark 0.16 0 to 0.15 0.2 2.8 + – 0.3 0.2 1.6 + – 0.1 43A 5 4 1.9 2.9±0.2 3 0.4±0.1 0.4±0.1 1 Cathode 2 Cathode 3 Cathode 4 Anode 5 Cathode Hitachi Code JEDEC Code EIAJ Code Weight (g) MPAK-5 — — 0.013 (0.6) 1.1 – 0.1 (0.8) + 0.2 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>.


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