HZM5.6ZFA

HZM5.6ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-796 (Z) Rev 0 May. 1999 Features HZM5.6ZFA has four devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM5.6ZFA Laser Mark 56Z Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM5.6ZFA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Four device total, See Fig.2. Electrical Characteristics (Ta = 25°C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd — Min 5.31 — — — 8 Typ — — 8.0 — — Max 5.92 0.5 8.5 80 — Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 2.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR > 0.5µA at VR = 2.5V. 2 HZM5.6ZFA Main Characteristic 10 -2 250 1.0mm 200 (A) 10 Power Dissipation Pd (mW) -3 Cu Foil 150 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil Zener Current Iz 10 -4 100 10 -5 50 10 -6 0 0 2 4 6 8 10 0 50 100 150 200 Zener Voltage Vz (V) Ambient Temperature Ta ( ¡ C) Fig.2 Power Dissipation Vs. Ambi...