HZM6.2ZWA

HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499(Z) Rev 0 Feb. 1997 Features HZM6.2ZWA has two devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.2ZWA Laser Mark 62Z Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HZM6.2ZWA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Two device total, See Fig.2. Electrical Characteristics (Ta = 25°C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd — Min 5.90 — — — 13 Typ — — 8.0 — — Max 6.50 3 8.5 60 — Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 5.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR>3 µA at VR = 5.5V. 2 HZM6.2ZWA Main Characteristic 10 -2 250 1.0mm Power Dissipation Pd (mW) (A) 10 -3 200 Cu Foil 150 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil Iz Zener Current 10 -4 100 10 -5 50 10 -6 0 0 2 4 Zener Voltage 6 8 Vz (V) 10 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Fig.1 Zener cur...