HZM68FA

HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A(Z) Rev 1 September 1996 Features HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.8FA Laser Mark 68A Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM6.8FA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Four device total, With P.C board. Electrical Characteristics (Ta = 25°C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability Symbol VZ IR C rd — Min 6.47 — — — 30 Typ — — — — — Max 7.0 2 130 30 — Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse *2 Notes 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5V. 2 HZM6.8FA Main Characteristic 10 -3 10-4 (A) Iz Zener Current 10 -5 10 -6 10 10 -7 -8 10 10 -9 -10 -11 10 0 1 2 3 4 5 6 7 8 Zener Voltage Vz (V) Fig.1 Zener current Vs. Zener voltage 250 1.0mm 200 Cu Foil Power Dissipation P d (mW) 150 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 100 50 0 0 50 100 150 200 Ambient Temperature Ta (°C) Fig.2 Power Dissipation Vs. ...