HZM7.5FA

HZM7.5FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-616 (Z) Rev 0 Apr. 1998 Features HZM7.5FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM7.5FA Laser Mark 75A Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM7.5FA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Four device total, With P.C board. Electrical Characteristics (Ta = 25°C) *2 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *1 Symbol VZ IR C rd — Min 7.06 — — — 30 Typ — — — — — Max 7.84 2 125 30 — Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 4V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Failure criterion ; IR > 2 µA at VR = 4V. 2. Per one device. 2 HZM7.5FA Main Characteristic -2 10 10 (A) Iz Zener Current 10 -3 -4 -5 10 10 -6 10 -7 10 10 -8 -9 10 -10 0 1 2 3 4 5 6 7 8 Zener Voltage Vz (V) Fig.1 Zener current Vs. Zener voltage 250 1.0mm 200 Power Dissipation Pd (mW) Cu Foil 150 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 100 50 0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Amb...