HZT33

HZT33 Monolithic IC Zener Diode for Temperature Compensation ADE-208-135B(Z) Rev 2 Nov. 1999 Features Lower temperature coefficient of the reference voltage. (γz=±1 mV/°C typ) Lower dynamic resistance. Ordering Information Type No. HZT33 Mark Type No. Package Code DO-35 Outline 1 HZT 33 2 Type No. Cathode band 1. Cathode 2. Anode HZT33 Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Operation temperature Storage temperature Symbol Pd * 1 Value 200 -20 to +75 -40 to +175 Unit mW °C °C Topr Tstg Note: 1. Value at Ta = 75°C Electrical Characteristics (Ta = 25°C) Item Zener Voltage Dynamic resistance Temperature coefficient Note: 1. Absolute Value Symbol VZ rd γZ Min 31.0 — — Typ — — 1* 1 Max 35.0 25.0 — Unit V Ω mV/° C Test Condition I Z = 5mA I Z = 5mA I Z = 5mA Ta = −20 to 25 to 75°C 2 HZT33 Main Characteristic 10-2 500 5mm 2.5 mm 3 mm 400 Ta=25°C Power Dissipation P d (mW) 10 Zener Current Iz (A) -3 Printed circuit board 100 ×180 ×1.6t mm Quality: paper phenol 300 200 10-4 100 10 -5 0 25 30 35 0 50 Ambient Temperature Ta (°C) Fig.2 Power Dissipation Vs. Ambient Temperature 100 Zener Voltage V Z (V) Fig.1 Zener Current Vs. Zener voltage 3 HZT33 Package Dimensions Unit: mm 26.0 Min 4.2 Max 26.0 Min φ 2.0 φ 0.5 Hitachi Code JEDEC EIAJ M ass DO-35 Conforms Conforms 0.13 g 4 HZT33 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other...