IC61C256AH

IC61C256AH Document Title 32K x 8 High Speed SRAM Revision History Revision No 0A 0B 0C 0D History Initial Draft Revise typo of tHA on page 7 Add SOP package type Revise typo of sop size at page 2,9 Draft Date March 23,2001 October 18,2001 February 18,2002 April 19,2002 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. AHSR010-0D 4/19/2002 1 IC61C256AH 32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES High-speed access times: 10, 12, 15, 20, 25 ns Low active power: 400 mW (typical) Low standby power -- 250 µW (typical) CMOS standby -- 55 mW (typical) TTL standby Fully static operation: no clock or refresh required TTL compatible interface and outputs Single 5V power supply DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 50 µW (typical) with CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writ...