RAM. IC61C256AH Datasheet

IC61C256AH Datasheet PDF


Part

IC61C256AH

Description

32K x 8 HIGH-SPEED CMOS STATIC RAM

Manufacture

Integrated Circuit Solution

Page 9 Pages
Datasheet
Download IC61C256AH Datasheet


IC61C256AH Datasheet
IC61C256AH
Document Title
32K x 8 High Speed SRAM
Revision History
Revision No History
0A Initial Draft
0B Revise typo of tHA on page 7
0C Add SOP package type
0D Revise typo of sop size at page 2,9
Draft Date
Remark
March 23,2001
October 18,2001
February 18,2002
April 19,2002
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
AHSR010-0D 4/19/2002
1

IC61C256AH Datasheet
IC61C256AH
32K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access times: 10, 12, 15, 20, 25 ns
• Low active power: 400 mW (typical)
• Low standby power
-- 250 µW (typical) CMOS standby
-- 55 mW (typical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible interface and outputs
• Single 5V power supply
DESCRIPTION
The ICSI IC61C256AH is very high-speed, low power, 32,768
word by 8-bit static RAMs. They are fabricated using ICSI's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 8 ns maximum.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
50 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (CE). The active LOW Write Enable (WE) controls
both writing and reading of the memory.
The IC61C256AH is pin compatible with other 32k x 8 SRAMs
and are available in 28-pin 300mil PDIP, 300mil SOJ, and
8*13.4mm TSOP-1 package, 330 mil SOP.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
VCC
GND
I/O0-I/O7
DECODER
32K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
CONTROL
OE CIRCUIT
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2 Integrated Circuit Solution Inc.
AHSR010-0D 4/19/2002


Features Datasheet pdf IC61C256AH Document Title 32K x 8 High S peed SRAM Revision History Revision No 0A 0B 0C 0D History Initial Draft Rev ise typo of tHA on page 7 Add SOP packa ge type Revise typo of sop size at page 2,9 Draft Date March 23,2001 October 18,2001 February 18,2002 April 19,2002 Remark The attached datasheets are pr ovided by ICSI. Integrated Circuit Solu tion Inc reserve the right to change th e specifications and products. ICSI wil l answer to your questions about device . If you have any questions, please con tact the ICSI offices. Integrated Circ uit Solution Inc. AHSR010-0D 4/19/2002 1 IC61C256AH 32K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed acc ess times: 10, 12, 15, 20, 25 ns • Lo w active power: 400 mW (typical) • Lo w standby power -- 250 µW (typical) CM OS standby -- 55 mW (typical) TTL stand by • Fully static operation: no clock or refresh required • TTL compatible interface and outputs • Single 5V po wer supply DESCRIPTION The ICSI IC61C256AH is very high-speed, low power, 3.
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