DatasheetsPDF.com

EDB103 Dataheets PDF



Part Number EDB103
Manufacturers Rectron
Logo Rectron
Description GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER
Datasheet EDB103 DatasheetEDB103 Datasheet (PDF)

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EDB101 THRU EDB106 GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * * Good for automatic insertion Surge overloading rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram DB-1 MECHANICAL DATA * UL listed the recog.

  EDB103   EDB103


Document
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EDB101 THRU EDB106 GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * * Good for automatic insertion Surge overloading rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram DB-1 MECHANICAL DATA * UL listed the recognized component directory, file #94233 * Epoxy: Device has UL flammability classification 94V-O .255 (6.5) .245 (6.2) .350 (8.9) .300 (7.6) .335 (8.51) .320 (8.12) .135 (3.4) .115 (2.9) .165 (4.2) .155 (3.9) .060 (1.5) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .020 (0.5) .205 (5.2) .195 (5.0) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC Peak Forward Surge Current IFM (surge):8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO I FSM CJ T J , T STG 15 -65 to + 150 EDB101 50 35 50 EDB102 100 70 100 EDB103 150 105 150 1.0 30 10 EDB104 200 140 200 EDB105 300 210 300 EDB106 400 280 400 UNITS Volts Volts Volts Amps Amps pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @T A = 25 o C @T A =150 o C SYMBOL VF IR trr EDB101 EDB102 EDB103 1.0 EDB104 EDB105 EDB106 1.25 UNITS Volts uAmps 50 50 nSec 2001-5 5.0 RATING AND CHARACTERISTIC CURVES ( EDB101 THRU EDB106 ) AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load trr +0.5A (-) PULSE GENERATOR (+) 25 Vdc (approx) (-) D.U.T 0 -0.25A 1.0 (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( ) 1cm SET TIME BASE FOR 10 ns/cm FIG. 3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 100 TJ = 150 10 TJ = 100 1.0 F14 TJ = 25 15~ SF 16 SF1 1~S 1.0 .1 .1 TJ = 25 .01 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) .001 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) 35 30 25 20 15 10 5 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 8.3ms Single Half Sine-Wave (JEDEC Method) 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) 100 TJ = 25 EDB10 1~EDB 104 SF Pulse Width = 300uS 1% Duty Cycle EDB105~ EDB106 RECTRON .


EDB102S EDB103 EDB103S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)