EFA480C-SOT89

Excelics EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features LOW COST SURFACE-MOUNT PLASTIC PACKAGE +34.0dBm TYPICAL OUTPUT POWER 12.0dB TYPICAL POWER GAIN AT 2GHz 0.8dB TYPICAL NOISE FIGURE AT 2GHz +48dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY   $ &#    6285&(    '5$,1 *$7(  Applications Analog and Digital Wireless System HPA (Top View) All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz Vds=7V, Ids=750mA Gain at 1dB Compression f = 2GHz Vds=7V, Ids=750mA Power Added Efficiency at 1dB Compression Vds=7V, Ids=750mA f = 2GHz Noise Figure f = 2GHz Vds=5V, Ids=300mA Vds=5-7V, Ids=750mA Output 3rd Order Intercept Point f = 2GHz Vds=5-7V, Ids=750mA Vds=5V, Ids=300mA Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=14mA -11 -7 MIN 32.5 10.0 TYP 34.0 12.0 45 0.8 2.0 48 39 880 560 1360 720 -2.0 -15 -14 14* o MAX UNIT dBm dB % dB dBm 1760 mA mS -3.5 V V V C/W Drain Breakdown Voltage Igd=4.8mA Source Breakdown Voltage Igs=4.8mA Thermal Resistance * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf...