SILICON RECTIFIER. EFM102 Datasheet

EFM102 RECTIFIER. Datasheet pdf. Equivalent

Part EFM102
Description SUPER FAST SILICON RECTIFIER
Feature RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EFM101 THRU EFM106 SURFACE MOUNT GLASS PASSIVATED SU.
Manufacture Rectron
Datasheet
Download EFM102 Datasheet




EFM102
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
EFM101
THRU
EFM106
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
DO-214AC
0.067 (1.70)
0.051 (1.29)
0.180(4.57)
0.160(4.06)
0.110 (2.79)
0.086 (2.18)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.091 (2.31)
0.067 (1.70)
0.059 (1.50)
0.035 (0.89)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 55oC
Peak Forward Surge Current IFM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
EFM101 EFM102 EFM103 EFM104 EFM105 EFM106
50 100 150 200 300 400
35 70 105 140 210 280
50 100 150 200 300 400
UNITS
Volts
Volts
Volts
1.0 Amps
IFSM
CJ
TJ, TSTG
30
15
-65 to + 175
Amps
10 pF
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TA = 25oC
@TA =150oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
VF
IR
trr
EFM101
EFM102 EFM103 EFM104
0.95
5.0
EFM105 EFM106
1.25
50
UNITS
Volts
uAmps
35 nSec
2001-4



EFM102
RATING AND CHARACTERISTIC CURVES ( EFM101 THRU EFM106 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NON-INDUCTIVE
+0.5A
trr
(+)
25 Vdc
(approx)
(-)
D.U.T
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
5/10 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
TJ = 150
10
TJ = 100
1.0
1.0
TJ = 25
.1
TJ = 25
.1
Pulse Width = 300uS
.01 1% Duty Cycle
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
60
50
40
TJ = 25
30
20
10
0
.1 .5 1 2 5 10 20 50 100 200 400
NUMBER OF CYCLES AT 60Hz
.001
0 .2 .4 .6 .8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
2
1
.1
TJ = 25
.2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON







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