EL-1CL3

Infrared Emitting Diodes(GaAs) K O D E N S H I EL-1CL3 DIMENSIONS (Unit : mm) FEATURES ¶UCompact (©™ 3mm) ¶UWide beam angle ¶U Low-cost APPLICATIONS ¶UFloppy disk drives ¶UOptical switches ¶UOptical readers MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2°…) 5 Symbol VR F I FP I PD Topr. Tstg. Tsol. Rating 4 60 0.5 80 -20~+70 -20~+80 240 Unit V mA A mW °… °… °… *1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Symbol VF R I Ct PO Îp ƒÎ °‚Ë (Ta=2° 5…) Conditions F=40mA I VR=4V f=1MHz F=40mA I F=40mA I F=40mA I Min. Typ. 1.2 25 1.8 940 50 °æ 53 Max. 1.5 10 Unit. V Ï A pF mW/sr nm nm deg. - 1- Infrared Emitting Diodes(GaAs) EL-1CL3 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current Vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- ...