INFRARED EMITTING DIODES
Infrared Emitting Diodes(GaAs)
K O D E N S H I
EL-1KL3 °§EL-1KL5
DIMENSIONS
The EL-1KL3 and 1KL5 are high-power GaAs I...
Description
Infrared Emitting Diodes(GaAs)
K O D E N S H I
EL-1KL3 °§EL-1KL5
DIMENSIONS
The EL-1KL3 and 1KL5 are high-power GaAs IREDs mounted in durable, hermetically sealed TO-18 metal can package, which provides years of reliable performance even under demanding conditions such as use outdoors.
(Unit : mm)
FEATURES
¶UNarrow beam angle ¶U Durable ¶UHigh reliability in demanding environments
APPLICATIONS
¶UOptical emitters ¶UOptical switches ¶U Encoders ¶USmoke sensors
EL-1KL3
EL-1KL5
MAXIMUM RATINGS
Item
Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°…) 5
Symbol
VR F I FP I PC Topr. Tstg. Tsol.
Rating
5 100 1 170 -40~+100 -55~+125 260
Unit
V mA A mW °… °… °…
*1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle
(Ta=2° 5…)
Symbol
VF R I Ct PO Îp ƒÎ °‚Ë
Conditions
I= 1 0 0 m A VR=5V f=1MHz F=100mA I F=100mA I F=100mA I
F
EL-1KL3 Max. Min. Typ.
1.35 25 15 940 50 °æ8 1.7 10
EL-1KL5 Typ. Max. Min.
1.35 25 10 940 50 °æ5 1.7 10
Unit.
V Ï A pF mW/sr nm nm deg.
- 1-
Infrared Emitting Diodes(GaAs)
EL-1KL3 °§EL-1KL5
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. ...
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