EL-316

Infrared Emitting Diodes(GaAs) K O D E N S H I EL-316 DIMENSIONS The EL-316 is a high-power GaAs IRED mounted in a clear epoxy package. (Unit : mm) FEATURES ¶U©™3 casting mold type ¶UHigh output power APPLICATIONS ¶U VTR ¶UOptical remote controllers ¶UTransmission sensors MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp. (Ta=2°…) 5 Symbol VR F I PD FP I Topr. Tstg. Tsol. Rating 4 60 80 0.5 £≠ 25 °≠£´ 80 £≠ 40 °≠£´ 85 240 Unit V mA mW A °… °… °… *1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Spectral bandwidth Radiant intensity Half angle (Ta=2° 5…) Symbol VF R I Îp ƒÎ PO ƒË Conditions F=40mA I VR=4V F=40mA I F=40mA I F=40mA I Min. Typ. 1.2 940 50 20 °æ 17 Max. 1.5 10 Unit. V Ï A nm nm mW/sr deg. 10 - 1- Infrared Emitting Diodes(GaAs) EL-316 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- ...