Document
EL2009C
EL2009C
90 MHz 1 Amp Buffer Amplifier
Features
High slew rate 3000 V ms Wide bandwidth 125 MHz RL e 50X 90 MHz RL e 10X Output current 1A continuous Output impedance 1X Short circuit protected Power package with isolated metal tab
General Description
The EL2009 is a patented high speed bipolar monolithic buffer amplifier designed to provide currents over 1 amp at high frequencies while drawing 40 mA of quiescent supply current The EL2009’s 3000 V ms slew rate and 90 MHz bandwidth driving a 10X load insures stability in fast op amp feedback loops Elantec has applied for patents on unique circuitry within the EL2009 Used as an open loop buffer the EL2009’s low output impedance (1X) gives a gain of 0 99 when driving a 100X load and 0 9 driving a 10X load The EL2009 has an output short circuit current limit which will protect the device under both a DC fault condition and AC operation with reactive loads The EL2009 is constructed using Elantec’s proprietary Complementary Bipolar process that produces PNP and NPN transistors with essentially identical AC and DC characteristics In the EL2009 the Complementary Bipolar process also insulates the package’s metal heat sink tab from all supply voltages Therefore the tab may be mounted to an external heat sink or the chassis without an insulator The EL2009CT is specified for operation over the 0 C to a 75 C temperature range and is provided in a 5-lead TO-220 plastic power package
Applications
Video distribution amplifier Fast op amp booster Flash converter driver Motor driver Pulse transformer driver A T E pin driver
Ordering Information
Part No Temp Range Package Outline TO-220 MDP0028 EL2009CT 0 C to a 75 C
Connection Diagram
5-Pin TO-220
Simplified Schematic
December 1995 Rev C
2009 – 1
Top View
2009 – 2
Manufactured under U S Patent No 4 833 424 and 4 827 223 and U K Patent No 2217134
Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation
1989 Elantec Inc
EL2009C
90 MHz 1 Amp Buffer Amplifier
Absolute Maximum Ratings (TA e 25 C)
VS VIN IIN PD Supply Voltage (V a b Vb) Input Voltage (Note 1) Input Current (Note 1) Power Dissipation (Note 2)
g 18V or 36V g 15V or VS g 50 mA See Curves
TA TJ TST TLD
Operating Temperature Range Operating Junction Temp Storage Temp Range Lead Solder Temp k10 seconds
0 C to a 75 175 b 65 C to a 150 300
C C C C
Important Note All parameters having Min Max specifications are guaranteed The Test Level column indicates the specific device testing actually performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJ e TC e TA Test Level I II III IV V Test Procedure 100% production tested and QA sample tested per QA test plan QCX0002 100% production tested at TA e 25 C and QA sample tested at TA e 25 C TMAX and TMIN per QA test plan QCX0002 QA sample tested per QA test plan QCX0002 Parameter is guaranteed (but not tested) by Design and Characterization Data Parameter is typical value at TA e 25 C for information purposes only
Electrical Characteristics VS e g 15V
Parameter VOS Description VIN Output Offset Voltage 0
RS e 50X unless otherwise specified Limits Min
b 60 b 80 b 125 b 200 b5
Test Conditions Load % Temp 25 C TMIN TMAX
Typ
Max 60 80 125 200
Test Level I IV I IV I I I I I
Units mV mV mA mA kX V V V V V V V V X X A A mA dB TD is 3 6in
IIN
Input Current
0
%
25 C TMIN TMAX
RIN AV1 AV2 AV3 VO1 VO2 RO1 RO2 IO
Input Impedance Voltage Gain Voltage Gain Voltage Gain VS e g 5V Output Voltage Swing Output Voltage Swing Output Impedance Output Impedance Output Current
g 12V g 10V g 10V g 3V g 14V g 12V g 10V g 10V g 12V
100X % 10X 10X 100X 10X
g 10 mA g 1A
25 C 25 C 25 C 25 C 25 C 25 C 25 C 25 C 25 C TMIN TMAX
250 0 985 0 88 0 87
g 13 g 10 5
900 0 999 0 90 0 89
g 11
I 15 I I I IV
09 14 1 30 60 45 18
10
(Note 3)
IS PSRR
Supply Current Supply Rejection (Note 4)
0 0
% %
25 C 25 C
65
I I
2
EL2009C
90 MHz 1 Amp Buffer Amplifier
Electrical Characteristics VS e g 15V
Parameter VS a VSb SR1 SR2 tr tf BW CIN THD Description Supply Sensitivity (Note 5) Slew Rate (Note 6) Slew Rate (Note 7) Rise Fall Time
b 3 dB Bandwidth
g 10V
RS e 50X unless otherwise specified Limits Min Typ
Contd
Max 2 Test Level I V V V V V 1 I Units
Test Conditions VIN Load % 50X 10X 10X 10X 10X Temp 25 C 25 C
mV V V ms V ms ns TD is 2 1in MHz pF %
3000 2500 1250 7 90 25
g 5V
25 C 25 C 25 C 25 C 25 C
100 mV 100 mV
Input Capacitance Total Harmonic Distortion
Note 1 If the inpu.