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M4N26 Dataheets PDF



Part Number M4N26
Manufacturers Motorola Inc
Logo Motorola  Inc
Description 6-Pin DIP Optoisolators Transistor Output
Datasheet M4N26 DatasheetM4N26 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N26/D M4N26 6-Pin DIP Optoisolators Transistor Output The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentia.

  M4N26   M4N26



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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N26/D M4N26 6-Pin DIP Optoisolators Transistor Output The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • I/O Interfacing • Solid State Relays SCHEMATIC 6 1 STANDARD THRU HOLE STYLE 1 PLASTIC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 7 70 50 150 1.76 Volts Volts Volts mA mW mW/°C VR IF PD 3 60 100 1.41 Volts mA mW mW/°C Symbol Value Unit 1 2 3 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE 6 5 4 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Motorola Optoelectronics Device Data © Motorola, Inc. 1997 1 M4N26 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic INPUT LED Forward Voltage (IF = 10 mA) TA = 25°C TA = –55°C TA = 100°C VF — — — — — 1.15 1.3 1.05 — 18 1.5 — — 100 — Volts Symbol Min Typ(1) Max Unit Reverse Leakage Current (VR = 3 V) Capacitance (V = 0 V, f = 1 MHz) OUTPUT TRANSISTOR Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C) (VCE = 10 V, TA = 100°C) Collector–Base Dark Current (VCB = 10 V) Collector–Emitter Breakdown Voltage (IC = 1 mA) Collector–Base Breakdown Voltage (IC = 100 µA) Emitter–Collector Breakdown Voltage (IE = 100 µA) Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) Collector–Base Capacitance (f = 1 MHz, VCB = 0) Emitter–Base Capacitance (f = 1 MHz, VEB = 0) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA) Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Isolation Voltage (f = 60 Hz, t = 1 sec)(4) Isolation Resistance (V = 500 V)(4) Isolation Capacitance (V = 0 V, f = 1 MHz)(4) 1. 2. 3. 4. IR CJ µA pF ICEO ICEO ICBO V(BR)CEO V(BR)CBO V(BR)ECO CCE CCB CEB IC (CTR)(2) VCE(sat) ton toff tr tf VISO RISO CISO — — — 30 70 7 — — — 1 1 0.2 45 100 7.8 7 19 9 50 — — — — — — — — nA µA nA Volts Volts Volts pF pF pF 2 (20) — — — — — 7500 1011 — 7 (70) 0.15 2.8 4.5 2 2 — — 0.2 — 0.5 — — — — — — — mA (%) Volts µs µs µs µs Vac(pk) Ω pF Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 14. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2 Motorola Optoelectronics Device Data M4N26 1.4 V F , FORWARD VOLTAGE (V) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 1.0 10 100 IF, FORWARD CURRENT (mA) 0 0 1.0 10 100 IF, LED CURRENT (mA) TA = 25°C TA = 85°C NCTR, NORMALIZED CTR TA = –55°C 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V NCTR 1.0 NCTR(sat) 0.5 TA = 25°C Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non–Saturated and Saturated CTR, TA = 25°C vs. LED Current 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V NCTR, NORMALIZED CTR 1.0 NCTR, NORMALIZED CTR NCTR TA = 50°C NCTR(sat) NCTR TA = 70°C NCTR(sat) 1.0 0.5 0.5 0 0.1 1.0 10 100 IF, LED CURRENT (mA) 0 0.1 1.0 10 100 IF, LED CURRENT (mA) Figure 3. Normalized Non–Saturated and Saturated CTR, TA = 50°C vs. LED Current Figure 4. Normalized Non–Saturated and Saturated CTR, TA = 70°C vs. LED Current 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V NCTR, NORMALIZED CTR NCTR TA = 85°C 1.0 0.5 NCTR(sat) 0 0.1 1.0 10 100 IF, LED CURRENT (mA) Figure 5. Normalized Non–Saturated and Saturated CTR, TA = 85°C vs. LED Current Motorola Optoelectronics Device Data 3 M4N26 35 .


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