Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by M4N26/D
M4N26 6-Pin DIP Optoisolators Transistor Output
The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • I/O Interfacing • Solid State Relays SCHEMATIC
6 1 STANDARD THRU HOLE
STYLE 1 PLASTIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 7 70 50 150 1.76 Volts Volts Volts mA mW mW/°C VR IF PD 3 60 100 1.41 Volts mA mW mW/°C Symbol Value Unit
1 2 3 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE
6 5 4
1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Motorola Optoelectronics Device Data © Motorola, Inc. 1997
1
M4N26
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic INPUT LED Forward Voltage (IF = 10 mA) TA = 25°C TA = –55°C TA = 100°C VF — — — — — 1.15 1.3 1.05 — 18 1.5 — — 100 — Volts Symbol Min Typ(1) Max Unit
Reverse Leakage Current (VR = 3 V) Capacitance (V = 0 V, f = 1 MHz) OUTPUT TRANSISTOR Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C) (VCE = 10 V, TA = 100°C) Collector–Base Dark Current (VCB = 10 V) Collector–Emitter Breakdown Voltage (IC = 1 mA) Collector–Base Breakdown Voltage (IC = 100 µA) Emitter–Collector Breakdown Voltage (IE = 100 µA) Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) Collector–Base Capacitance (f = 1 MHz, VCB = 0) Emitter–Base Capacitance (f = 1 MHz, VEB = 0) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA) Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3) Isolation Voltage (f = 60 Hz, t = 1 sec)(4) Isolation Resistance (V = 500 V)(4) Isolation Capacitance (V = 0 V, f = 1 MHz)(4) 1. 2. 3. 4.
IR CJ
µA pF
ICEO ICEO ICBO V(BR)CEO V(BR)CBO V(BR)ECO CCE CCB CEB IC (CTR)(2) VCE(sat) ton toff tr tf VISO RISO CISO
— — — 30 70 7 — — —
1 1 0.2 45 100 7.8 7 19 9
50 — — — — — — — —
nA µA nA Volts Volts Volts pF pF pF
2 (20) — — — — — 7500 1011 —
7 (70) 0.15 2.8 4.5 2 2 — — 0.2
— 0.5 — — — — — — —
mA (%) Volts µs µs µs µs Vac(pk) Ω pF
Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 14. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2
Motorola Optoelectronics Device Data
M4N26
1.4 V F , FORWARD VOLTAGE (V) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 1.0 10 100 IF, FORWARD CURRENT (mA) 0 0 1.0 10 100 IF, LED CURRENT (mA) TA = 25°C TA = 85°C NCTR, NORMALIZED CTR TA = –55°C 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V NCTR
1.0
NCTR(sat)
0.5
TA = 25°C
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non–Saturated and Saturated CTR, TA = 25°C vs. LED Current
1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V
1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V
NCTR, NORMALIZED CTR
1.0
NCTR, NORMALIZED CTR
NCTR TA = 50°C NCTR(sat)
NCTR TA = 70°C NCTR(sat)
1.0
0.5
0.5
0 0.1 1.0 10 100 IF, LED CURRENT (mA)
0 0.1 1.0 10 100 IF, LED CURRENT (mA)
Figure 3. Normalized Non–Saturated and Saturated CTR, TA = 50°C vs. LED Current
Figure 4. Normalized Non–Saturated and Saturated CTR, TA = 70°C vs. LED Current
1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V
NCTR, NORMALIZED CTR
NCTR TA = 85°C
1.0
0.5
NCTR(sat)
0 0.1 1.0 10 100 IF, LED CURRENT (mA)
Figure 5. Normalized Non–Saturated and Saturated CTR, TA = 85°C vs. LED Current
Motorola Optoelectronics Device Data
3
M4N26
35 .