MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M54522P/FP
8-UNIT 400mA DARLINGTON
TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54522P and M54522FP are eight-circuit Darlington
transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 GND 9 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10 →COM COMMON
OUTPUT
FEATURES High breakdown voltage (BVCEO ≥ 40V) High-current driving (Ic(max) = 400mA) With clamping diodes Driving available with PMOS IC output Wide operating temperature range (Ta = –20 to +75°C)
Package type 18P4G(P)
NC
1
20
NC
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between microcomputer output and high-current or high-voltage systems
INPUT
IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9 GND 10
19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 →COM COMMON
OUTPUT
FUNCTION The M54522P and M54522FP each have eight circuits consisting of
NPN Darlington
transistors. These ICs have resistance of 20kΩ between input
transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collecto...