MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M54562P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON
TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington
transistor arrays. The circuits are made of
PNP and
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION
INPUT
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 VS 9 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10 GND
OUTPUT
FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Io(max) = –500mA) With output clamping diodes Driving available with PMOS IC output of 6 ~ 16V or with TTL output Wide operating temperature range (Ta = –20 to +75°C) Output current-sourcing type
Package type 18P4G(P)
NC
1
20
NC
APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
FUNCTION The M54562P and M54562FP each have eight circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of
PNP transistors and
NPN Darlington
transistors. The
PNP transistor base current is constant. A spike-killer clamping diode is provided between each output and GND. V S and GND are used commonly among the eight circuits. The inputs have resistance of 8.5k Ω, and volt...
