MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M54587P/FP
8-UNIT 500mA DARLINGTON
TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington
transistor arrays. The circuits are made of
PNP and
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
NC IN1 IN2 IN3 IN4 INPUT IN5
6 7 8 9 10 15 14 13 12 11 1 2 3 4 5 20 19 18 17 16
COM COMMON O1 O2 O3 O4 OUTPUT O5 O6 O7 O8 VCC NC : No connection
FEATURES q High breakdown voltage (BVCEO ≥ 50V) q High-current driving (IC(max) = 500mA) q “L” active level input q With input diode q With clamping diodes q Wide operating temperature range (Ta = –20 to +75° C)
IN6 IN7 IN8 GND
20P4(P) Package type 20P2N-A(FP)
APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic IC interfaces
CIRCUIT DIAGRAM (EACH CIRCUIT)
VCC 7K INPUT 7K 2.7K 7.2K 3K GND COM OUTPUT
FUNCTION The M54587 is produced by adding
PNP transistors to M54585 inputs. Eight circuits having active L-level inputs are provided. Resistance of 7kΩ and diode are provided in series between each input and
PNP transistor base. The input diode is intended to prevent the flow of current from the input to the VCC. Without this diode, the current flow from “H” input to the VCC and the “L” input circuits is activated, in such case where one of the inputs of th...
