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M54HC670 Dataheets PDF



Part Number M54HC670
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 4 WORD x 4 BIT REGISTER FILE
Datasheet M54HC670 DatasheetM54HC670 Datasheet (PDF)

M54HC670 M74HC670 4 WORD X 4 BIT REGISTER FILE (3 STATE) . . . . . . . . HIGH SPEED tPD = 23 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE |IOH| = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS670 B1R (Plastic Package) F1R (Ceramic Package) M.

  M54HC670   M54HC670



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M54HC670 M74HC670 4 WORD X 4 BIT REGISTER FILE (3 STATE) . . . . . . . . HIGH SPEED tPD = 23 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE |IOH| = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS670 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HC670F1R M74HC670M1R M74HC670B1R M74HC670C1R PIN CONNECTIONS (top view) DESCRIPTION The M54/74HC670 is a high speed CMOS 4 WORD X 4 BIT REGISTER FILE (3-STATE) fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The M54HC/74HC670 is a 4 x 4 Register File organized as four words by four bits. Separate read and write inputs, both address and enable, allow simultaneous read and write operation. The 3-state outputs make it possible to connect up to 128 outputs to increase the word capacity up to 512 words. Any number of these devices can be operated in parallel to generate an n-bit length. All inputs are equipped with protection circuits against static discharge and transient excess voltage. October 1992 NC = No Internal Connection 1/12 M54/M74HC670 WRITE FUNCTION TABLE WRITE INPUTS WB L L H H X WA L H L H X WE L L L L H 0 Q=D Q0 Q0 Q0 Q0 WORDS 1 Q0 Q=D Q0 Q0 Q0 2 Q0 Q0 3 Q0 Q0 READ FUNCTION TABLE READ INPUTS RB L L H H X RA L H L H X RE L L L L H OUTPUTS Q0 Q1 Q2 Q3 W0B1 W0B2 W0B3 W0B4 W1B1 W1B2 W1B3 W1B4 W2B1 W2B2 W2B3 W2B4 W3B1 W3B2 W3B3 W3B4 Z Z Z Z Q=D Q0 Q0 Q=D Q0 Q0 Notes: 1 *: DON’T CARE Z: HIGH IMPEDANCE 2 (Q = D) = THE FOUR SELECT INTERNAL FLIP FLOP OUTPUTS WILL ASSUME THE STATES APPLIED TO THE FOUR EXTERNAL DATA INPUTS. 3 Q0 = THE LEVEL OF Q BEFORE THE INDICATED INPUT CONDITIONS WERE ESTABLISHED. 4 W0B1 = THE FIRST BIT OF WORD 0, ETC. LOGIC DIAGRAM 2/12 M54/M74HC670 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 5, 4 10, 9, 7, 6 11 12 14, 13 15, 1, 2, 3 7 14 SYMBOL RA, RB Q1 to Q4 RE WE WA, WB D1 to D4 GND V CC NAME AND FUNCTION Read Address Inputs Data Outputs 3 State Output Read Enable Input (Active LOW) Write Enable Input (Active LOW) Write Address Inputs Data Inputs Ground (0V) Positive Supply Voltage IEC LOGIC SYMBOL ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO ICC or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o C o C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these .


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