K1S161611A

Preliminary K1S161611A Document Title 1Mx16 bit Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revised - Added Lead Free 48-FBGA-6.00x7.00 Product Draft Date October 6, 2003 Remark Preliminary November 25, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.1 November 2003 Preliminary K1S161611A 1M x 16 bit Uni-Transistor CMOS RAM FEATURES UtRAM GENERAL DESCRIPTION The K1S161611A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface. Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 2.7V~3.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Power Dissipation Product Family Operating Temp. Vcc Range Speed Standby (ISB1, Max.) 80µA Operating (ICC2, Max.) 30mA PKG Type K1S161611A-I Industrial(-40~85°C) 2.7V~3.1V 70ns 48-FBGA-6.00x7.00 PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. A LB...