K4E660812C

K4E660812C,K4E640812C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES Part Identification - K4E660812C-JC/L(3.3V, 8K Ref.) - K4E640812C-JC/L(3.3V, 4K Ref.) - K4E660812C-TC/L(3.3V, 8K Ref.) - K4E640812C-TC/L(3.3V, 4K Ref.) Extended Data Out Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast parallel test mode capability LVTTL(3.3V) compatible inputs and outputs Active Power Dissipation Unit : mW Speed -45 -50 -60 Refresh Cycles Part NO. K4E660812C* K4E640812C Refresh cycle 8K 4K Refresh time Normal 64ms L-ver 128ms RAS CAS W Control Clocks VBB Generator Vcc Vss Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic SOJ and TSOP(II) packages +3.3V±0.3V power supply 4K 432 396 360 8K 324 288 ...