K4F160812D

K4F170811D, K4F160811D K4F170812D, K4F160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES Part Identification - K4F170811D-B(F) (5V, 4K Ref.) - K4F160811D-B(F) (5V, 2K Ref.) - K4F170812D-B(F) (3.3V, 4K Ref.) - K4F160812D-B(F) (3.3V, 2K Ref.) Fast Page Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast parallel test mode capability TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Unit : mW Available in Plastic SOJ and TSOP(II) packages Single +5V±10% power supply (5V product) 2K 605 550 Single +3.3V±0.3V po...