K9W4G08U1M

K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Aug. 30.2001 Nov. 5. 2001 Remark Advance Preliminary 0.2 1. 5th cycle of ID is changed : 40h --> 44h 1. Add WSOP Package Dimensions. 1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package 1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed . - min. 4016 --> 4036 1. Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30 Jan. 23. 2002 Preliminary 0.3 0.4 0.5 May. 29. 2002 Aug. 13. 2 002 Aug. 22. 2002 Preliminary Preliminary Preliminary 0.6 Nov. 07. 2002 Preliminary invalid blocks. 2. K9W4GXXU1M’ s ID is changed (Before) Device K9W4G08U1M K9W4G16U1M (After) Device K9W4G08U1M K9W4G16U1M 2nd Cycle 3rd cycle DAh CAh C1 C1 4th Cycle 15h 55h 5th Cycle 44h 44h Nov. 22. 2002 Preliminary 2nd Cycle 3rd cycle DCh CCh C3 C3 4th Cycle 5th Cycle 15h 55h 4Ch 4Ch 0.7 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 1. The min. Vcc value 1.8V devices is changed. K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V 0.8 Mar. 6. 2003 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specific...