LAE4001R

DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Self-aligned process entirely ion implanted and gold sandwich metallization Optimum temperature profile Excellent performance and reliability. APPLICATIONS Common emitter class A linear power amplifiers up to 4 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits. 2 4 handbook, halfpage LAE4001R PINNING - SOT100 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 3 c b e 1 MAM312 Marking code: R8. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tcase = 25 °C in a common emitter class A circuit. MODE OF OPERATION CW linear amplifier f (GHz) 4 VCE (V) 15 IC (mA) 25 PL1 (mW) >85 Gpo (dB) >8.5 Zi (Ω) typ.7 + j22 ZL (Ω) typ. 10 + j38 MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter vo...