LBAV99LT1

LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode 1 ANODE 3 CAHODE/ANODE 2 CATHODE LBAV99LT1 3 1 2 DEVICE MARKING LBAV99LT1 = A7 SOT–23 Symbol VR IF I FM(surge) V RRM I F(AV) I FRM I FSM Value 70 215 500 70 715 450 2.0 1.0 0.5 Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 R θJA T J , T stg 417 –65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C Unit Vdc mAdc mAdc V mA mA A MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current t = 1.0 µ s t = 1.0 ms t = 1.0 S THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (1) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol V (BR) IR Min 70 — –– –– — –– — –– –– — — Max — 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Unit Vdc µAdc OFF CHARACTERISTICS Reverse Breakdown Voltage(I (BR) = 100 µA) Reverse Voltage Leakage Current (V R = 70 Vdc) (V R = 25 Vdc, T J = 150°C) (V R = 70 Vdc, T J = 150°C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I ...