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LBE2003S Dataheets PDF



Part Number LBE2003S
Manufacturers Philipss
Logo Philipss
Description NPN microwave power transistors
Datasheet LBE2003S DatasheetLBE2003S Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold metallization • Optimum temperature profile • Excellent performance and reliability. APPLICATIONS • Common emitt.

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DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold metallization • Optimum temperature profile • Excellent performance and reliability. APPLICATIONS • Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION LBE2003S; LBE2009S; LCE2009S The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. PINNING DESCRIPTION collector emitter base emitter handbook, halfpage 4 handbook, halfpage 4 c 3 1 3 c b e 2 Top view Marking code: LCE2009S = 408. MAM330 b e 2 1 Top view MAM329 Marking code: LBE2003S = 407; LBE2009S = 409. Fig.1 Simplified outline and symbol (SOT441A). Fig.2 Simplified outline and symbol (SOT442A). QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. TYPE NUMBER LBE2003S LBE2009S LCE2009S MODE OF OPERATION Class-A (CW) linear Class-A (CW) linear f (GHz) 2 2 VCE (V) 18 18 IC (mA) 30 110 PL1 (mW) ≥200 ≥700 Gpo (dB) ≥10 ≥9 Zi (Ω) 6.2 + j30 7.5 + j15 ZL (Ω) 17.5 + j7 17.5 + j39 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Mar 03 2 Philips Semiconductors Product specification NPN microwave power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER PARAMETER collector-base voltage collector-emitter voltage LBE2003S LBE2009S; LCE2009S VCEO VEBO IC collector-emitter voltage emitter-base voltage collector current (DC) LBE2003S LBE2009S; LCE2009S Ptot total power dissipation LBE2003S LBE2009S; LCE2009S Tstg Tj Tsld storage temperature operating junction temperature soldering temperature Tmb ≤ 75 °C RBE = 220 Ω RBE = 100 Ω open base open collector CONDITIONS open emitter LBE2003S; LBE2009S; LCE2009S MIN. MAX. 40 V V V V V UNIT − − − − − − − − −65 − 35 35 16 3 90 250 1.4 3.5 +150 200 235 mA mA W W °C °C °C at 0.3 mm from case; t = 10 s − 102 handbook, halfpage MGD996 handbook, halfpage 2 MGD989 IC (mA) Ptot (W) 1.5 (1) (2) (3) 10 1 0.5 1 10 15 20 30 40 60 100 VCE (V) 0 −50 0 50 100 150 200 Tmb (oC) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 220 Ω. (3) Second breakdown limit (independent of temperature). Fig.4 Fig.3 DC SOAR; LBE2003S. Power dissipation derating as a function of mounting-base temperature; LBE2003S. LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Mar 03 3 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S; LCE2009S 103 handbook, halfpage IC (mA) 102 (3) MGD990 handbook, halfpage 4 MGD991 P tot (W) 3 2 (1) (2) 10 1 1 10 20 40 VCE (V) 102 0 −50 0 50 100 200 150 Tmb (oC) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 100 Ω. (3) Second breakdown limit (independant of temperature). Fig.6 Fig.5 DC SOAR; LBE2009S, LCE2009S Power dissipation derating as a function of mounting-base temperature; LBE2009S, LCE2009S. THERMAL CHARACTERISTICS SYMBOL Rth j-mb LBE2003S LBE2009S; LCE2009S Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC15”. thermal resistance from mounting-base to heatsink Tj = 75 °C; note 1 PARAMETER thermal resistance from junction to mounting-base CONDITIONS Tj = 75 °C; note 1 65 36 1.5 K/W K/W K/W MAX. UNIT LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Mar 03 4 Philips Semiconductors Product specification NPN microwave power transistors CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO ICBO PARAMETER collector cut-off current collector cut-off current LBE2003S LBE2009S; LCE2009S ICER collector cut-off current LBE2003S LBE2009S; LCE2009S IEBO emitter cut-off current LBE2003S LBE2009S; LCE2009S hFE Ccb DC current gain collector-base capacitance LBE2003S LBE2009S; LCE2009S Cce collector-emitter capacitance LBE2003S LBE2009S; LCE2009S Ceb emitter-base capacitance LBE2003S LBE2009S; LCE2009S V.


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