PDTA114EEF

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 1999 May 21 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor FEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 10 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. 1 Top view 2 MAM413 PDTA114EEF PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output DESCRIPTION handbook, halfpage 3 R1 1 R2 3 2 DESCRIPTION PNP resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complement: PDTC114EEF. MARKING Fig.1 Simplified outline (SC-89; SOT490) and symbol. 1 3 2 TYPE NUMBER PDTA114EEF MARKING CODE 03 MGA893 - 1 Fig.2 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-89 (SOT490) standard mounting conditions. 1999 May 21 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C;...